Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2023, 15, 25, 30443-30454
Functional Inorganic Materials and Devices
- Yogesh SinghYogesh SinghAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Yogesh Singh
- Rahul ParmarRahul ParmarElettra Sincrotrone, s.s. 14 km 163,500 in Area Science Park, 34149, Basovizza Trieste ItalyMore by Rahul Parmar
- Avritti SrivastavaAvritti SrivastavaAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Avritti Srivastava
- Reena YadavReena YadavAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Reena Yadav
- Kapil KumarKapil KumarAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Kapil Kumar
- Sanju RaniSanju RaniAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Sanju Rani
- ShashiShashiTata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, IndiaMore by Shashi
- Sanjay K. SrivastavaSanjay K. SrivastavaAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Sanjay K. Srivastava
- Sudhir HusaleSudhir HusaleAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Sudhir Husale
- Mahesh SharmaMahesh SharmaAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Mahesh Sharma
- Sunil Singh KushvahaSunil Singh KushvahaAcademy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Sunil Singh Kushvaha
- Vidya Nand Singh*Vidya Nand Singh*Email: [email protected]Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, IndiaCSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, IndiaMore by Vidya Nand Singh
Abstract
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The development of imaging technology and optical communication demands a photodetector with high responsiveness. As demonstrated by microfabrication and nanofabrication technology advancements, recent progress in plasmonic sensor technologies can address this need. However, these photodetectors have low optical absorption and ineffective charge carrier transport efficiency. Sb2Se3 is light-sensitive material with a high absorption coefficient, making it suitable for photodetector applications. We developed an efficient, scalable, low-cost near-infrared (NIR) photodetector based on a nanostructured Sb2Se3 film deposited on p-type micropyramidal Si (made via the wet chemical etching process), working on photoconductive phenomena. Our results proved that, at the optimized thickness of the Sb2Se3 layer, the proposed Si micropyramidal substrate enhanced the responsivity nearly two times, compared with that of the Sb2Se3 deposited on a flat Si reference sample and a glass/Sb2Se3 sample at 1064 nm (power density = 15 mW/cm2). More interestingly, the micropyramidal silicon-based device worked at 0 V bias, paving a path for self-bias devices. The highest specific detectivity of 2.25 × 1015 Jones was achieved at 15 mW/cm2 power density at a bias voltage of 0.5 V. It is demonstrated that the enhanced responsivity was closely linked with field enhancement due to the Kretschmann configuration of Si pyramids, which acts as hot spots for Si/Sb2Se3 junction. A high responsivity of 47.8 A W–1 proved it suitable for scalable and cost-effective plasmonic-based NIR photodetectors.
Copyright ? 2023 American Chemical Society
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